NJVMJD32CT4G
ActiveON Semiconductor
3.0 A, 100 V PNP BIPOLAR POWER TRANSISTOR/ REEL ROHS COMPLIANT: YES
NJVMJD32CT4G
ActiveON Semiconductor
3.0 A, 100 V PNP BIPOLAR POWER TRANSISTOR/ REEL ROHS COMPLIANT: YES
Description
General part information
NJVMJD32CT4G
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | NJVMJD32CT4G |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 50 µA |
| DC Current Gain (hFE) (Min) | 25 |
| Frequency - Transition | 3 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.56 W |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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