DMG3407SSN-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
DMG3407SSN-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMG3407SSN-7
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG3407SSN-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 16 nC |
| Input Capacitance (Ciss) (Max) | 700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SC-59-3 |
| Power Dissipation (Max) | 1.1 W |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
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Documents
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