NSVBAS16W1T1G
ActiveULTRA‐HIGH SPEED SWITCHING DIODES - TRIPLE CONFIGURATION IN SC-88
NSVBAS16W1T1G
ActiveULTRA‐HIGH SPEED SWITCHING DIODES - TRIPLE CONFIGURATION IN SC-88
Description
General part information
NSVBAS16W1T1G
These Silicon Epitaxial Planar Diodes are designed for use in ultra-high speed switching applications. These devices are in a triple diode configuration and housed in the SC−88 package which is designed for low power surface mount applications where PCB space is at a premium.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVBAS16W1T1G |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 mA |
| Current - Reverse Leakage | 1 µA |
| Diode Configuration | Independent |
| Diode Count | 3 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88/SC70-6/SOT-363 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 3 ns |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 1.2 V |
Pricing
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