DMC2041UFDB-13

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC2041UFDB-13

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	713 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

Complementary Pair Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Configuration	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Diodes Inc DMC2041UFDB-7	-55 °C	150 °C	U-DFN2020-6 (Type B)	1.4 W	MOSFET (Metal Oxide)	20 V	40 mOhm	N and P-Channel	Surface Mount	15 nC	1.4 V	713 pF	6-UDFN Exposed Pad
Diodes Inc DMC2041UFDB-13	-55 °C	150 °C	U-DFN2020-6 (Type B)	1.4 W	MOSFET (Metal Oxide)	20 V	40 mOhm	N and P-Channel	Surface Mount	15 nC	1.4 V	713 pF	6-UDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	10000	$ 0.28

General part information

Complementary Pair Enhancement Mode MOSFET

Technical documentation and resources