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NCP81080MNTBG

NCP81080MNTBG

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ON Semiconductor

HIGH SIDE AND LOW SIDE GATE DRIVER, HIGH-FREQUENCY, 180V OFFERING 0.5A SOURCE/0.8A CAPABILITY

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NCP81080MNTBG

NCP81080MNTBG

Active
ON Semiconductor

HIGH SIDE AND LOW SIDE GATE DRIVER, HIGH-FREQUENCY, 180V OFFERING 0.5A SOURCE/0.8A CAPABILITY

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Description

General part information

NCP81080MNTBG

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.This driver is ideally suited for use in high voltage buck and motor control applications.The part is offered in a SO8 and 8 pin 2mm by 2mm DFN package and fully specified from -40C to 140C.

Technical Specifications

Parameters and characteristics for this part

SpecificationNCP81080MNTBG
Channel TypeSynchronous
Current - Peak Output (Sink)0.8 A
Current - Peak Output (Source)0.5 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)17 ns
Gate ChannelN-Channel
Gate TypeMOSFET
Input TypeTTL
Logic Voltage - VIH1.8 V
Logic Voltage - VIL1.2 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)140 °C
Operating Temperature (Min)-40 °C
Package / Case8-VFDFN Exposed Pad
Package Length2 mm
Package Name8-DFN
Package Width2 mm
Rise Time (Typ)19 ns
Voltage - Supply (Maximum)20 V
Voltage - Supply (Minimum)5.5 V

Pricing

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CAD

3D models and CAD resources for this part

    NCP81080MNTBG | ON Semiconductor | Zenode.ai