DHG60I1200HA

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IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

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IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	DHG60I1200HA

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	125 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.32 V

Part	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Speed
IXYS DHG60C600HB	1 Pair Common Cathode	30 A	TO-247AD	600 V	TO-247-3	Through Hole	200 mA 500 ns	2.36 V	150 °C	-55 °C	50 µA	Standard	35 ns
IXYS DHG60I1200HA			TO-247AD	1.2 kV	TO-247-2	Through Hole	200 mA 500 ns	2.32 V	150 °C	-55 °C	125 µA	Standard	200 ns	60 A
IXYS DHG60I600HA			TO-247	600 V	TO-247-2	Through Hole	200 mA		150 °C	-55 °C		Standard		60 A	Standard Recovery >500ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 6.02

General part information

Diode 1200 V 60A Through Hole TO-247AD

Technical documentation and resources