IRFR3410TRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 31 A, 0.034 OHM, TO-252AA, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 31 A, 0.034 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR3410TRLPBF

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	1690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	110 W, 3 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFR3410TRPBF	4 V	3 W 110 W	1690 pF	20 V	MOSFET (Metal Oxide)	10 V	TO-252AA (DPAK)	31 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	-55 °C	175 ░C	100 V	Surface Mount	56 nC	39 mOhm
Infineon Technologies IRFR3410TRLPBF	4 V	3 W 110 W	1690 pF	20 V	MOSFET (Metal Oxide)	10 V	TO-252AA (DPAK)	31 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	-55 °C	175 ░C	100 V	Surface Mount	56 nC	39 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources