2N5550TFR
ActiveON Semiconductor
TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES
2N5550TFR
ActiveON Semiconductor
TRANSISTOR,BJT,NPN,140V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES
Description
General part information
2N5550TFR
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5550TFR |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 60 |
| Frequency - Transition | 300 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources