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S2M0160120D

S2M0160120D

Active
SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

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S2M0160120D

S2M0160120D

Active
SMC Diode Solutions

MOSFET SILICON CARBIDE SIC 1200V

Find alt

Description

General part information

S2M0160120D

N-Channel 1200 V 17A (Tc) 130W (Tc) Through Hole TO-247AD

Technical Specifications

Parameters and characteristics for this part

SpecificationS2M0160120D
Current - Continuous Drain (Id) (Tc)17 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)26.5 nC
Input Capacitance (Ciss) (Max)513 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247AD
Power Dissipation (Max)130 W
Rds On (Max)196 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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