BCX5616QTA

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Diodes Inc

TRANS GP BJT NPN 80V 1A 2000MW 4-PIN(3+TAB) SOT-89 T/R AUTOMOTIVE AEC-Q101

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Active

Diodes Inc

TRANS GP BJT NPN 80V 1A 2000MW 4-PIN(3+TAB) SOT-89 T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	BCX5616QTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	SOT-89-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN, 80V, 1A, SOT89

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc BCX5616QTA	100 nA	150 MHz	1 A	SOT-89-3	Surface Mount	80 V	100	TO-243AA	2 W	NPN	150 °C	-65 °C	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.