S85QR

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GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 85A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S85QR

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Speed
GeneSiC Semiconductor S85QR	Chassis Stud Mount	1.1 V	Reverse Polarity Standard	DO-203AB DO-5 Stud	-65 C	180 °C	85 A	DO-5	1.2 kV	10 µA	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	600	$ 9.92

General part information

Diode 1200 V 85A Chassis, Stud Mount DO-5

Technical documentation and resources