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Description

General part information

2N6671

Bipolar (BJT) Transistor PNP 300 V 8 A 150 W Through Hole TO-3

Technical Specifications

Parameters and characteristics for this part

Specification2N6671
Current - Collector (Ic) (Max)8 A
DC Current Gain (hFE) (Min)10
Mounting TypeThrough Hole
Package / CaseTO-3, TO-204AA
Package NameTO-3
Power - Max150 W
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300 V

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