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DGD2106MS8-13 - Package Image for SO-8

DGD2106MS8-13

Active
Diodes Inc

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Deep-Dive with AI

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DGD2106MS8-13 - Package Image for SO-8

DGD2106MS8-13

Active
Diodes Inc

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDGD2106MS8-13
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]290 mA
Current - Peak Output (Source, Sink) [custom]600 mA
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]2.5 V
Logic Voltage - VIL, VIH [custom]0.6 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]100 ns
Supplier Device Package8-SO
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.70
10$ 1.74
25$ 1.49
100$ 1.21
250$ 1.07
500$ 0.99
1000$ 0.92
Digi-Reel® 1$ 2.70
10$ 1.74
25$ 1.49
100$ 1.21
250$ 1.07
500$ 0.99
1000$ 0.92
Tape & Reel (TR) 2500$ 0.75

Description

General part information

DGD2106M Series

The DGD2106M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.