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NVMFS6H858NLT1G

NVMFS6H858NLT1G

Active
ON Semiconductor

TRANS MOSFET N-CH 80V 8.7A 5-PIN SO-FL EP T/R AUTOMOTIVE AEC-Q101

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NVMFS6H858NLT1G

NVMFS6H858NLT1G

Active
ON Semiconductor

TRANS MOSFET N-CH 80V 8.7A 5-PIN SO-FL EP T/R AUTOMOTIVE AEC-Q101

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Description

General part information

NVMFS6H858NLT1G

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS6H858NLT1G
Current - Continuous Drain (Id) (Ta)8.7 A
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)623 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads5 Leads
Package Length5 mm
Package Name8-SOFL, 5-DFN, 8-PowerTDFN
Package Width6 mm
Power Dissipation (Max)42 W, 3.5 W
QualificationAEC-Q101
Rds On (Max)19.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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