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ISC019N04NM5ATMA1 - ISC015N04NM5

ISC019N04NM5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

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ISC019N04NM5ATMA1 - ISC015N04NM5

ISC019N04NM5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationISC019N04NM5ATMA1
Current - Continuous Drain (Id) @ 25°C29 A, 170 A
Drain to Source Voltage (Vdss)40 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds3900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)100 W, 3 W
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackagePG-TDSON-8 FL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.55
10$ 1.01
50$ 0.86
100$ 0.69
200$ 0.65
DigikeyCut Tape (CT) 1$ 1.95
10$ 1.24
100$ 0.84
500$ 0.67
1000$ 0.61
2000$ 0.56
Digi-Reel® 1$ 1.95
10$ 1.24
100$ 0.84
500$ 0.67
1000$ 0.61
2000$ 0.56
Tape & Reel (TR) 5000$ 0.52
NewarkEach (Supplied on Cut Tape) 1$ 1.95
10$ 1.37
25$ 1.25
50$ 1.14
100$ 1.02
250$ 0.94
500$ 0.86
1000$ 0.80

Description

General part information

ISC019N Series

With the OptiMOSTM5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vthin the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGSratios (CGD/CGSdivider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Documents

Technical documentation and resources