VP2450N8-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 30 OHM
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VP2450N8-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -500V, 30 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VP2450N8-G | VP2450 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 160 mA | 160 mA |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF | 190 pF |
| Mounting Type | Surface Mount | Through Hole, Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-243AA | TO-226-3, TO-92-3, TO-243AA |
| Power Dissipation (Max) | - | 740 mW |
| Rds On (Max) @ Id, Vgs | 30 Ohm | 30 Ohm |
| Supplier Device Package | TO-243AA (SOT-89) | TO-92-3, TO-243AA (SOT-89) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.13 | |
| 25 | $ 1.78 | |||
| 100 | $ 1.62 | |||
| Digi-Reel® | 1 | $ 2.13 | ||
| 25 | $ 1.78 | |||
| 100 | $ 1.62 | |||
| Tape & Reel (TR) | 2000 | $ 1.62 | ||
| Microchip Direct | T/R | 1 | $ 2.13 | |
| 25 | $ 1.78 | |||
| 100 | $ 1.62 | |||
| 1000 | $ 1.35 | |||
| 5000 | $ 1.25 | |||
| 10000 | $ 1.15 | |||
VP2450 Series
MOSFET, P-Channel Enhancement-Mode, -500V, 30 Ohm
| Part | Package / Case | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VP2450N3-G | |||||||||||||||
Microchip Technology VP2450N8-G | |||||||||||||||
Microchip Technology VP2450N3-G | TO-226-3, TO-92-3 | 740 mW | 20 V | 190 pF | 4.5 V, 10 V | 3.5 V | Through Hole | -55 °C | 150 °C | MOSFET (Metal Oxide) | P-Channel | 500 V | 30 Ohm | TO-92-3 | |
Microchip Technology VP2450N3-G | |||||||||||||||
Microchip Technology VP2450N8-G | TO-243AA | 20 V | 190 pF | 4.5 V, 10 V | 3.5 V | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | P-Channel | 500 V | 30 Ohm | TO-243AA (SOT-89) | 160 mA |
Description
General part information
VP2450 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.