DMC2057UVT-7

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC2057UVT-7

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	4 A, 3.3 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	536 pF, 416 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs [Max]	70 mOhm, 42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V, 1 V

Complementary Pair Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Technology	Configuration	Mounting Type
Diodes Inc DMC2057UVT-7	3.3 A 4 A	416 pF 536 pF	-55 °C	150 °C	42 mOhm 70 mOhm	SOT-23-6 Thin TSOT-23-6	1 V 1.2 V	20 V	10.5 nC	6.5 nC	700 mW	MOSFET (Metal Oxide)	N and P-Channel Complementary	Surface Mount

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Complementary Pair Enhancement Mode MOSFET

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