DGD2012S8-13

Obsolete

Diodes Inc

IC GATE DRV HALF-BRIDGE 8SO 2.5K

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Obsolete

Diodes Inc

IC GATE DRV HALF-BRIDGE 8SO 2.5K

Technical Specifications

Parameters and characteristics for this part

Specification	DGD2012S8-13

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SO
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Channel Type	Input Type	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Supplier Device Package	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Diodes Inc DGD2012S8-13	Independent	Non-Inverting	Half-Bridge	200 V	2	150 °C	-40 °C	20 V	10 VDC	8-SOIC	3.9 mm	0.154 in	0.8 V 2.5 V	2.3 A	1.9 A	Surface Mount	8-SO	MOSFET (N-Channel)	20 ns	40 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SO

Technical documentation and resources