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NVMFS6B05NLWFT1G

NVMFS6B05NLWFT1G

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 100V, 114A, 5.6MΩ

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NVMFS6B05NLWFT1G

NVMFS6B05NLWFT1G

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 100V, 114A, 5.6MΩ

Find alt

Description

General part information

NVMFS6B05NLWFT1G

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS6B05NLWFT1G
Current - Continuous Drain (Id) (Tc)114 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)3980 pF, 3980 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads5 Leads
Package Length5 mm
Package Name8-SOFL, 5-DFN, 8-PowerTDFN
Package Width6 mm
Power Dissipation (Max)165 W, 3.8 W
QualificationAEC-Q101
Rds On (Max)5.6 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part