FDC8602
ActiveON Semiconductor
DUAL N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100 V, 1.2 A, 350 MΩ
FDC8602
ActiveON Semiconductor
DUAL N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET, 100 V, 1.2 A, 350 MΩ
Description
General part information
FDC8602
Shielded Gate MOSFET Technology
Max r DS(on) = 350 m O at V GS = 10 V, I D = 1.2 A
Max r DS(on) = 575 m O at V GS = 6 V, I D = 0.9 A
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC8602 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 1.2 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 2 nC |
| Input Capacitance (Ciss) (Max) | 70 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power - Max | 690 mW |
| Rds On (Max) | 350 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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