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S1JLH - MFG_DO-219AB

S1JLH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SUB SMA

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S1JLH - MFG_DO-219AB

S1JLH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SUB SMA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS1JLH
Capacitance @ Vr, F9 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseDO-219AB
Reverse Recovery Time (trr)1.8 µs
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageSub SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.42
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
2000$ 0.08
5000$ 0.07
Digi-Reel® 1$ 0.42
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
2000$ 0.08
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05

Description

General part information

S1J Series

Diode 600 V 1A Surface Mount Sub SMA

Documents

Technical documentation and resources