1N4006T-G

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Comchip Technology

DIODE GEN PURP 800V 1A DO41

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Comchip Technology

DIODE GEN PURP 800V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4006T-G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 800V 1A DO41

Part	Package / Case	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology 1N4006T-G	Axial, DO-204AL, DO-41	5 µA	1 A	15 pF	Standard Recovery >500ns	200 mA	DO-41	150 °C	-55 °C	Standard	Through Hole	1.1 V	800 V

General part information

Diode 800 V 1A Through Hole DO-41

Technical documentation and resources

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