SFF2002GHC0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 20A ITO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 20A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFF2002GHC0G

Capacitance @ Vr, F	90 pF
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Reverse Recovery Time (trr)	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Package / Case
Taiwan Semiconductor Corporation SFF2002GHC0G	100 V	AEC-Q101	35 ns	Through Hole	200 mA 500 ns	10 µA	ITO-220AB	150 °C	-55 °C	Automotive	975 mV	90 pF	Standard	TO-220-3 Full Pack Isolated Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 20A Through Hole ITO-220AB

Technical documentation and resources