IRFB3407ZPBF

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Infineon Technologies

75V 122A 6.4MΩ@10V,75A 230W TO-220-3 MOSFETS ROHS

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Infineon Technologies

75V 122A 6.4MΩ@10V,75A 230W TO-220-3 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3407ZPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4750 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs [Max]	6.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	FET Type
Infineon Technologies IRFB3407ZPBF	Through Hole	120 A	4750 pF	TO-220-3	6.4 mOhm	TO-220AB	-55 °C	175 ░C	10 V	110 nC	75 V	20 V	230 W	MOSFET (Metal Oxide)	4 V	N-Channel

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