SF36G A0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF36G A0G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Qualification	Grade
Taiwan Semiconductor Corporation SF36G A0G	60 pF	DO-201AD Axial	3 A	5 µA	1.3 V	150 °C	-55 °C	Standard	200 mA 500 ns	35 ns	400 V	DO-201AD	Through Hole
Taiwan Semiconductor Corporation SF36GH	60 pF	DO-201AD Axial	3 A	5 µA	1.3 V	150 °C	-55 °C	Standard	200 mA 500 ns	35 ns	400 V	DO-201AD	Through Hole	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources