2N6059

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STMicroelectronics

TRANS NPN DARL 100V 12A TO3

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STMicroelectronics

TRANS NPN DARL 100V 12A TO3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N6059	2N60 Series

Current - Collector (Ic) (Max) [Max]	12 A	4 - 12 A
Current - Collector Cutoff (Max) [Max]	1 mA	1 - 100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750 hFE	750
Frequency - Transition	4 MHz	4 MHz
Mounting Type	Chassis Mount	Through Hole, Chassis Mount
Operating Temperature	200 °C	150 - 200 °C
Package / Case	TO-3, TO-204AA	TO-225AA, TO-126-3, TO-3, TO-204AA
Power - Max [Max]	150 W	40 - 150 W
Supplier Device Package	-	SOT-32
Transistor Type	-	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V	80 - 100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 47.03

TRANS PNP DARL 80V 4A SOT32

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Frequency - Transition
STMicroelectronics 2N6036	TO-126-3, TO-225AA	750	4 A	150 °C	SOT-32	3 V	PNP - Darlington	80 V	Through Hole	100 µA	40 W
STMicroelectronics 2N6059	TO-204AA, TO-3	750 hFE	12 A	200 °C		3 V		100 V	Chassis Mount	1 mA	150 W	4 MHz

General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Chassis Mount TO-3

Technical documentation and resources