FES16BTR
ObsoleteON Semiconductor
DIODE GEN PURP 100V 16A TO220-2
FES16BTR
ObsoleteON Semiconductor
DIODE GEN PURP 100V 16A TO220-2
Description
General part information
FES16BTR
Diode 100 V 16A Through Hole TO-220-2
Technical Specifications
Parameters and characteristics for this part
| Specification | FES16BTR |
|---|---|
| Capacitance | 170 pF |
| Current - Average Rectified (Io) | 16 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220-2 |
| Reverse Recovery Time (trr) | 35 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 950 mV |
Pricing
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CAD
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Documents
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