ACGRC503-G

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Comchip Technology

DIODE GEN PURP 200V 5A DO214AB

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Comchip Technology

DIODE GEN PURP 200V 5A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRC503-G

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

DIODE GEN PURP 200V 5A DO214AB

Part	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Grade	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Speed	Speed
Comchip Technology ACGRC503-G	Standard	5 µA	150 °C	-55 °C	Surface Mount	Automotive	25 pF	200 V	AEC-Q101	1.15 V	5 A	DO-214AB (SMC)	DO-214AB, SMC	Standard Recovery >500ns	200 mA

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General part information

Diode 200 V 5A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available