IRF7907TRPBF

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Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 11.8 MOHM;

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Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 11.8 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7907TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11 A, 9.1 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	16.4 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.35 V

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies IRF7907PBF	2 N-Channel (Dual)	-55 °C	150 °C	850 pF	Logic Level Gate	8-SO	9.1 A 11 A	Surface Mount	16.4 mOhm	2 W	2.35 V	10 nC	30 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IRF7907TRPBF	2 N-Channel (Dual)	-55 °C	150 °C	850 pF	Logic Level Gate	8-SO	9.1 A 11 A	Surface Mount	16.4 mOhm	2 W	2.35 V	10 nC	30 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in

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General part information

Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.