
FFSB1065A
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, D2PAK-2L

FFSB1065A
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, D2PAK-2L
Description
General part information
FFSB1065A Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
Technical Specifications
Parameters and characteristics for this part
| Specification | FFSB1065A |
|---|---|
| Capacitance | 575 pF |
| Current - Average Rectified (Io) | 14 A |
| Current - Reverse Leakage | 200 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.75 V, 1.75 V |
Pricing
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