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FFSB1065A

FFSB1065A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, D2PAK-2L

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FFSB1065A

FFSB1065A

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 10 A, 650 V, D1, D2PAK-2L

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Description

General part information

FFSB1065A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSB1065A
Capacitance575 pF
Current - Average Rectified (Io)14 A
Current - Reverse Leakage200 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.75 V, 1.75 V

Pricing

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CAD

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