
CY14B101LA-SP25XI
ActiveNVSRAM, 1 MBIT, 128K X 8BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, SSOP-48
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CY14B101LA-SP25XI
ActiveNVSRAM, 1 MBIT, 128K X 8BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, SSOP-48
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Technical Specifications
Parameters and characteristics for this part
| Specification | CY14B101LA-SP25XI |
|---|---|
| Access Time | 25 ns |
| Memory Format | NVSRAM |
| Memory Interface | Parallel |
| Memory Organization | 128K x 8 |
| Memory Size | 1 Mbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-BSSOP |
| Package / Case [y] | 0.295 in |
| Package / Case [y] | 7.5 mm |
| Supplier Device Package | 48-SSOP |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 25 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CY14B101 Series
CY14B101LA-SP25XI is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 128Kbytes of 8bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.
Documents
Technical documentation and resources