STTA2006PI

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STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

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STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

Technical Specifications

Parameters and characteristics for this part

Specification	STTA2006PI

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	DOP3I-2 Insulated (Straight Leads)
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	DOP3I
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

DIODE GEN PURP 600V 20A DOP3I

Part	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Reverse Recovery Time (trr)	Package / Case	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
STMicroelectronics STTA2006PI	Standard	DOP3I	100 µA	150 °C	60 ns	DOP3I-2 Insulated (Straight Leads)	200 mA, 500 ns	Through Hole	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 20A Through Hole DOP3I

Technical documentation and resources

No documents available