
DMN1008UFDFQ-13
ActiveDiodes Inc
12V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN1008UFDFQ-13
ActiveDiodes Inc
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN1008UFDFQ-13
This MOSFET is designed to meet the stringent requirements ofautomotive applications. It is qualified to AEC-Q101, supported by aPPAP.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN1008UFDFQ-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12.2 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 23.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 995 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | U-DFN2020-6 (Type F) |
| Power Dissipation (Max) | 700 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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Documents
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