Zenode.ai Logo
Package Image for U-DFN2020-6

DMN1008UFDFQ-13

Active
Diodes Inc

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt
Package Image for U-DFN2020-6

DMN1008UFDFQ-13

Active
Diodes Inc

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN1008UFDFQ-13

This MOSFET is designed to meet the stringent requirements ofautomotive applications. It is qualified to AEC-Q101, supported by aPPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN1008UFDFQ-13
Current - Continuous Drain (Id) (Ta)12.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)23.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)995 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package NameU-DFN2020-6 (Type F)
Power Dissipation (Max)700 mW
QualificationAEC-Q101
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part