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MPSA29-D26Z

MPSA29-D26Z

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ON Semiconductor

NPN BIPOLAR JUNCTION DARLINGTON TRANSISTOR

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MPSA29-D26Z

MPSA29-D26Z

Active
ON Semiconductor

NPN BIPOLAR JUNCTION DARLINGTON TRANSISTOR

Find alt

Description

General part information

MPSA29(LEGACY%20FAIRCHILD) Series

This device is designed for applications requiring extremely high current gain at collector currents to 500 mA.

Technical Specifications

Parameters and characteristics for this part

SpecificationMPSA29-D26Z
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)10000
Frequency - Transition125 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package NameTO-92-3
Power - Max625 mW
Transistor TypeNPN, Darlington
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part