
MPSA29-D26Z
ActiveON Semiconductor
NPN BIPOLAR JUNCTION DARLINGTON TRANSISTOR

MPSA29-D26Z
ActiveON Semiconductor
NPN BIPOLAR JUNCTION DARLINGTON TRANSISTOR
Description
General part information
MPSA29(LEGACY%20FAIRCHILD) Series
This device is designed for applications requiring extremely high current gain at collector currents to 500 mA.
Technical Specifications
Parameters and characteristics for this part
| Specification | MPSA29-D26Z |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 10000 |
| Frequency - Transition | 125 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources