BS870-7-F

Active

Diodes Inc

TRANS MOSFET N-CH 60V 0.25A 3-PIN SOT-23 T/R

Search across all available documentation for this part.

Active

Diodes Inc

TRANS MOSFET N-CH 60V 0.25A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BS870-7-F

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	FET Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc BS870-7-F	50 pF	5 Ohm	3 V	SC-59 SOT-23-3 TO-236-3	250 mA	300 mW	10 V	60 V	Surface Mount	SOT-23-3	N-Channel	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources