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IRF9362TRPBF - null

IRF9362TRPBF

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Infineon Technologies

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 21 MOHM;

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IRF9362TRPBF - null

IRF9362TRPBF

Active
Infineon Technologies

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 21 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9362TRPBF
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]39 nC
Input Capacitance (Ciss) (Max) @ Vds1300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.93
10$ 0.81
100$ 0.56
500$ 0.47
1000$ 0.40
2000$ 0.35
Digi-Reel® 1$ 0.93
10$ 0.81
100$ 0.56
500$ 0.47
1000$ 0.40
2000$ 0.35
Tape & Reel (TR) 4000$ 0.35
8000$ 0.34
12000$ 0.31
28000$ 0.31
NewarkEach (Supplied on Cut Tape) 1$ 1.16
10$ 0.85
25$ 0.85
50$ 0.74
100$ 0.64

Description

General part information

IRF9362 Series

The IRF9362TRPBF is a HEXFET® dual P-channel Power MOSFET for use with charge and discharge switch for notebook PC battery applications. It is compatible with existing surface-mount techniques.