
IRF9362TRPBF
ActiveInfineon Technologies
IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 21 MOHM;
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IRF9362TRPBF
ActiveInfineon Technologies
IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 21 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9362TRPBF |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 39 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.93 | |
| 10 | $ 0.81 | |||
| 100 | $ 0.56 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.40 | |||
| 2000 | $ 0.35 | |||
| Digi-Reel® | 1 | $ 0.93 | ||
| 10 | $ 0.81 | |||
| 100 | $ 0.56 | |||
| 500 | $ 0.47 | |||
| 1000 | $ 0.40 | |||
| 2000 | $ 0.35 | |||
| Tape & Reel (TR) | 4000 | $ 0.35 | ||
| 8000 | $ 0.34 | |||
| 12000 | $ 0.31 | |||
| 28000 | $ 0.31 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.16 | |
| 10 | $ 0.85 | |||
| 25 | $ 0.85 | |||
| 50 | $ 0.74 | |||
| 100 | $ 0.64 | |||
Description
General part information
IRF9362 Series
The IRF9362TRPBF is a HEXFET® dual P-channel Power MOSFET for use with charge and discharge switch for notebook PC battery applications. It is compatible with existing surface-mount techniques.
Documents
Technical documentation and resources