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Description

General part information

2N5794 Series

This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5794A
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)100
GradeMilitary
Mounting TypeThrough Hole
NPN Count2
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-78-6 Metal Can
Package NameTO-78-6
Power - Max0.6 W
QualificationMIL-PRF-19500, 495
Transistor ConfigurationDual
Transistor TypeNPN
Vce Saturation (Max)900 mV
Voltage - Collector Emitter Breakdown (Max)40 V

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