2SB827R
ActiveON Semiconductor
PNP SILICON TRANSISTOR
2SB827R
ActiveON Semiconductor
PNP SILICON TRANSISTOR
Description
General part information
2SB827R
Bipolar (BJT) Transistor PNP 50 V 7 A 10MHz 60 W Through Hole TO-3PB
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB827R |
|---|---|
| Current - Collector (Ic) (Max) | 7 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 10 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3PB |
| Power - Max | 60 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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