IRFR825TRPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 1300 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; DPAK TO-252 PACKAGE; 1300 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR825TRPBF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1346 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	119 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFR825TRPBF	119 W	10 V	500 V	34 nC	Surface Mount	-55 °C	150 °C	N-Channel	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	6 A	1346 pF	MOSFET (Metal Oxide)	5 V	1.3 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 6A (Tc) 119W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources