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ONSEMI MJD31T4G

MJB45H11T4G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 10 A, 50 W, TO-263 (D2PAK), SURFACE MOUNT

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ONSEMI MJD31T4G

MJB45H11T4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 10 A, 50 W, TO-263 (D2PAK), SURFACE MOUNT

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Description

General part information

MJB45H11T4G

Low Collector-Emitter Saturation Voltage -VCE(sat)= 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Technical Specifications

Parameters and characteristics for this part

SpecificationMJB45H11T4G
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)40
Frequency - Transition40 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameD2PAK
Power - Max2 VA
Transistor TypePNP
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

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CAD

3D models and CAD resources for this part