DMP32D8UFZ-7B
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
DMP32D8UFZ-7B
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMP32D8UFZ-7B
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP32D8UFZ-7B |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 200 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 0.35 nC |
| Input Capacitance (Ciss) (Max) | 17 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XFDFN |
| Package Name | X2-DFN0606-3 |
| Power Dissipation (Max) | 290 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources