Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
General part information
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Technical documentation and resources
Parameters and characteristics for this part
| Specification | STS9P3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2615 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.7 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package
| Part | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STS9P3LLH6 | 2 V | P-Channel | 15 mOhm | 24 nC | 30 V | 8-SO | 20 V | 2615 pF | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V, 10 V | 2.7 W | MOSFET (Metal Oxide) | 9 A | Surface Mount |
