BD138G
ActiveON Semiconductor
1.5 A, 60 V PNP POWER BIPOLAR JUNCTION TRANSISTOR
BD138G
ActiveON Semiconductor
1.5 A, 60 V PNP POWER BIPOLAR JUNCTION TRANSISTOR
Description
General part information
BD138G
This series of plastic, medium-power PNP bipolar junction transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Technical Specifications
Parameters and characteristics for this part
| Specification | BD138G |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 40 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126 |
| Power - Max | 1.25 VA |
| Transistor Type | PNP |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
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Documents
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