IRF7862TRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 21 A, 0.003 OHM, SOIC, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 21 A, 0.003 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7862TRPBF

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	4090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	FET Type	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7862TRPBF	N-Channel	8-SO	Surface Mount	30 V	2.35 V	-55 °C	150 °C	21 A	45 nC	8-SOIC	3.9 mm	0.154 in	20 V	2.5 W	3.7 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	4090 pF

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