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Package Image for U-DFN2020-6

DMP2039UFDE-7

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for U-DFN2020-6

DMP2039UFDE-7

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMP2039UFDE-7

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2039UFDE-7
Current - Continuous Drain (Id) (Ta)6.7 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)48.7 nC
Input Capacitance (Ciss) (Max)2530 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-PowerUDFN
Package NameU-DFN2020-6 (Type E)
Power Dissipation (Max)800 mW
Rds On (Max)27 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part