DMN2400UFB4-7B

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMN2400UFB4-7B

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Technical Specifications

Parameters and characteristics for this part

Specification	DMN2400UFB4-7B

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	470 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	550 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

DMN2400UFB4 Series

NRND = Not Recommended for New Design

Part	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Configuration	Grade	Qualification
Diodes Inc DMN2400UFB4-7	3-XFDFN	20 V	N-Channel	1.8 V 4.5 V	Surface Mount	MOSFET (Metal Oxide)	900 mV	36 pF	470 mW	12 V	750 mA	-55 °C	150 °C	0.5 nC	550 mOhm
Diodes Inc DMN2400UV-7	SOT-563 SOT-666	20 V			Surface Mount	MOSFET (Metal Oxide)	900 mV	36 pF				-55 °C	150 °C	0.5 nC		530 mW	SOT-563	480 mOhm	Logic Level Gate	2 N-Channel (Dual)
Diodes Inc DMN2400UFB4-7B	3-XFDFN	20 V	N-Channel	1.8 V 4.5 V	Surface Mount	MOSFET (Metal Oxide)	900 mV	36 pF	470 mW	12 V	750 mA	-55 °C	150 °C	0.5 nC	550 mOhm						Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMN2400UFB4 Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

DMN2400UFB4-7B

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DMN2400UFB4-7B

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Technical Specifications

DMN2400UFB4 Series

Pricing

Description

DMN2400UFB4 Series

Documents

Datasheet

Recommended Soldering Techniques

Datasheet

Package PDF

DMN2400UFB4 Series