FDFM2N111
ActiveINTEGRATED N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE 20 V, 4 A, 100 MΩ
FDFM2N111
ActiveINTEGRATED N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE 20 V, 4 A, 100 MΩ
Description
General part information
FDFM2N111
FDFM2N111 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDFM2N111 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Max) | 3.8 nC |
| Input Capacitance (Ciss) (Max) | 273 pF, 273 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-WDFN Exposed Pad |
| Package Length | 3 mm |
| Package Name | MicroFET |
| Package Width | 3 mm |
| Power Dissipation (Max) | 1.7 W |
| Rds On (Max) | 100 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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