FDFS2P753Z
ObsoleteINTEGRATED P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE -30V, -3A, 115MΩ
FDFS2P753Z
ObsoleteINTEGRATED P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET AND SCHOTTKY DIODE -30V, -3A, 115MΩ
Description
General part information
FDFS2P753Z Series
The FDFS2P753Z combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDFS2P753Z |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Max) | 9.3 nC |
| Input Capacitance (Ciss) (Max) | 455 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) | 115 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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