DMG3406L-7

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Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 3.6 A, 0.025 OHM, SOT-23, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 3.6 A, 0.025 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DMG3406L-7

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.2 nC
Input Capacitance (Ciss) (Max) @ Vds	495 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	770 mW
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

30V N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package
Diodes Inc DMG3406L-7	3.6 A	11.2 nC	Surface Mount	4.5 V 10 V	-55 °C	150 °C	N-Channel	50 mOhm	770 mW	MOSFET (Metal Oxide)	495 pF	20 V	30 V	SC-59 SOT-23-3 TO-236-3	2 V	SOT-23-3

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General part information

30V N-Channel Enhancement Mode MOSFET

Technical documentation and resources