SFS1608GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO263AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFS1608GH

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Grade	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation SFS1608GH	600 V	60 pF	Surface Mount	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	35 ns	16 A	AEC-Q101	150 °C	-55 °C	Standard	TO-263AB (D2PAK)	1.7 V	200 mA 500 ns	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 16A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources